Name：Bin Zhang
Degrees: Ph. D.
Title：Associate Professor
Department：College of Communications & Microelectronics
Research interests：Mixed Signal IC Design, Electronic Design Automation, System On a Chip
Research team：Member of IC Design Lab
E-mail：2710159804@qq.com
【Biography】Dr. Bin Zhang received his B. S. degree in Applied Physics from Shanghai Jiao Tong University in 1994, M. S. degree in Physics from Peking University in 1997. After that, he went to study in the United States. He received his second M. S. degree in Physics from Texas A&M University. He then changed major to Electronics. He received his M. S. and Ph. D. degrees in Electrical and Computer Engineering from University of Texas at Austin in 2001 and 2009, respectively. From 2009 to 2013, he served as a faculty member in the University of Electronic Science and Technology of China (UESTC). Since 2013, he has been with College of Communications and Microelectronics, Chengdu University of Information Technology(CUIT). He received the Best Paper Award from International Symposium of Quality Electronics Design held in the Silicon Valley, USA in 2006 for his paper “FASER: fast analysis of soft error susceptibility for cell-based designs,” Bin Zhang, Wei-Shen Wang, M. Orshansky, Google Scholar Citations: 238. His research interests are Mixed Signal IC Design, Electronic Design Automation, System On a Chip.
【Courses &Teaching】
Undergraduate course：SOC Design, Electronic Micro-System Design
Postgraduate course：IC Design for Reliability
【Projects】pA Current Acquisition Circuit Design for DNA sequencing
【Publications】[1] B. Zhang, W.-S. Wang and M. Orshansky, “FASER: Fast analysis of soft error susceptibility for cell-based designs,” in Proc. International Symposium on Quality Electronic Design, 2006, pp. 755-760, San Jose, CA. (Best Paper Award最佳论文奖)
[2]B. Zhang, A. Arapostathis, S. Nassif and M. Orshansky, “Analytical modeling of SRAM dynamic stability,” in Proc. International Conference on Computer Aided Design, 2006, pp. 315 – 322, San Jose, CA.
[3] B. Zhang and M. Orshansky, “Symbolic simulation of the propagation and filtering
of transient faulty pulses,” in Workshop on System Effects of Logic Soft Errors, 2005, Urbana Champion, IL.
[4] A. Ramalingam, B. Zhang, A. Devgan, D. Z. Pan, “Sleep transistor sizing using timing criticality and temporal currents,” in Proc. Asia and South Pacific Design Automation Conference, 2005, pp. 1094 – 1097, Shanghai, China.
[5] K. Constantinides, S. Plaza, J. Blome, B. Zhang, V. Bertacco, S. Mahlke, T. Austin and M. Orshansky, “BulletProof: a defect-tolerant CMP switch architecture,” in Proc. International Symposium on High-Performance Computer Architecture, 2006, pp. 5-16, Austin, TX.
[6] K. Constantinides, S. Plaza, J. Blome, V. Bertacco, S. Mahlke, T. Austin, B. Zhang, and M. Orshansky, “Architecting a reliable CMP switch architecture,” in ACM Transations on Architecture and Code Optimization, Vol. 4, No. 1, March 2007.
[7] B. Zhang and M. Orshansky, “Modeling of NBTI-Induced PMOS Degradation under Arbitrary Dynamic Temperature Variation,” in Proc. International Symposium on Quality Electronic Design, 2008, pp. 774-779, San Jose, CA.
[8] B. Zhang and M. Orshansky, “On-line Circuit Reliability Monitoring,” in Proc. Great Lake Symposium on VLSI, 2009, Boston, MA.
[9]X. Fan, P. Li, W. Li, B. Zhang and X. Xie, “Gate-enclosed NMOS transistors,”半导体学报,32（8）, 2011. 8.
[10]范雪，李平，李威，杨志明，张斌，郭红霞，
“252Cf源和重离子加速器对FPGA的单粒子效应对比试验研究,”强激光与粒子束, 23（8）, 2011.8.
[11] 范雪，李威，李平，张斌，谢晓东，王刚，
基于环形栅和半环形栅N沟道金属氧化物半导体晶体管的总剂量辐射效应研究，
物理学报，61(1)， 2012. 1.
[12]蔡鹏飞，张斌（通信作者）.面向随钻测量的泥浆压力信号脉冲识别研究[J]. 成都信息工程大学学报，2019，34(4):380-383.
[13]张斌（通信作者），蔡鹏飞，何正松. 基于小型发电机的耐高温随钻测量系统设计[J]. 成都信息工程大学学报，2019，34(4):375-379.
[14]范喜悦， 张斌（通信作者）. 基于UDP的LabVIEW与VC++的数据通信[J]. 工业控制计算机2018，31（2）：36-38.
【Patents】“基于隔离和延迟技术的大功率DC-DC电源转换电路” 张斌，王海时，何正松（专利号：ZL 2018 1 0616606.6）；“一种测量单粒子翻转瞬态脉冲长度的电路及方法”张斌，王海时（专利号： ZL 2017 1 0520951.5）。
【Awards】Best Paper Award， International Symposium of Quality Electronics Design held in the Silicon Valley, USA in 2006.
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