Name：Yang Chen-Chen

Degrees: Doctor

Title：Lecturer

Department：Microelectronics

Research interests：Analog/RF/mmWave IC and system design

Research team：RFIC design team

E-mail：yangcc@cuit.edu.cn

【Biography】

Chen-Chen Yang received the B.Sc. degree in microelectronics from Jilin University, Changchun, China, in 2014, the M.Sc. degree from the Institute of Electronics, National Chiao-Tung University, Hsinchu, Taiwan, in 2016 and the Ph.D. degree at the School of Microelectronics, Fudan University, Shanghai, China. In 2022, he joined the Chengdu University of Information Technology as a lecturer.

His research interests include components of radio frequency (RF) and millimeter-wave integrated circuits in silicon technologies.

【Courses &Teaching】

Undergraduate course：Microelectronics technology

Postgraduate course：

【Projects】

Millimeter-wave phased-array TRX front-end chip design

【Publications】

1.Yang C C, Chen Y C, Lin H C, et al. Fabrication and RTN characteristics of gate-all-around poly-Si junctionless nanowire transistors[C]//2016 IEEE Silicon Nanoelectronics Workshop (SNW). IEEE, 2016: 64-65.

2.Yang C C, Peng K P, Chen Y C, et al. Study on random telegraph noise of gate-ail-around poly-Si junctionless nanowire transistors[C]//2017 Silicon Nanoelectronics Workshop (SNW). IEEE, 2017: 45-46.

3.Yang C C, Li T, Xu C, et al. A Low-Phase Error Cascode CMOS Variable Gain Amplifier With 180° Phase Control for Phase Array Systems[J]. IEEE Transactions on Microwave Theory and Techniques, 2022.

4.Yang C C, Li T, Chen Y, et al. A Low Amplitude/Phase Error 16dB CMOS Variable Gain Amplifier with 180° Phase Shifting[C]//2021 IEEE MTT-S International Wireless Symposium (IWS). IEEE, 2021: 1-3.

5.Yang C C, Yan N, Li T, et al. Design of a wideband CMOS digital step attenuator with high accuracy and low phase error[C]//2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT). IEEE, 2020: 1-3.

【Patents】

1.发明专利CN113517870A可变增益放大器及其应用

2.实用新型专利CN216122360U可变增益放大器

3.发明专利CN108511449B一种三维NAND型存储器下选择管的实现方法

4.发明专利CN107799527B一种双栅极三维存储器及其制作方法

5.集成电路布图BS.215000587 ATT

6.集成电路布图BS.215000595 VGA

【Awards】