Name：Yuanyuan Shi

Degrees: Ph.D. in Engineering

Title：Lecturer

Department：College of Communications Engineering

Research interests：Modeling & simulation of GaN devices

Research team：Sensors and Digital System Design

E-mail：yyshi@cuit.edu.cn

【Biography】

Ms. Shi Yuanyuan, female, lecturer, CPC member, Ph. D. degree. She used to work in Ningbo Institute of Materials of Chinese Academy of Sciences and South Glass Group, and has rich experience in scientific research and engineering development. In recent years, she has published 8 papers in high level journals and important academic conferences at home and abroad, including 4 papers in SCI and 3 papers in EI. Also she is the chairman of one horizontal cooperation project.

【Courses &Teaching】

Undergraduate course：Principles of Microelectronic Devices

【Projects】

1. Development of Efficient and Highly Reliable GaN DC-DC Converters (2020-2022)

【Publications】

[1] Yuanyuan Shi, Qi Zhou, Qian Cheng, et.al., “Carrier Transport Mechanisms Underlying the Bidirectional VTH Shift in p-GaN HEMTs under Forward Gate Stress” IEEE Trans. on Electron Devices, 2019, 66 (2):876-882. (SCI, IF:2.620)

[2] Yuanyuan Shi, Qi Zhou, A. Zhang, et.al., “Investigation of Bulk Traps by Conductance Method in the Deep Depletion Region of the Al2O3/GaN MOS Device,” Nanoscale Research Letters (2017) 12:342 (SCI, IF:3.125)

[3] Yuanyuan Shi, Qi Zhou, Yang Jin, et.al., “Impact of interface traps on switching behavior of Normally-OFF AlGaN/GaN MOS-HEMTs,” Physica Solidi Status-C 2016 , 13 (5-6):328-331 (EI)

[4] Yuanyuan Shi, Qi Zhou, Qian Cheng, et.al., “Bidirectional Threshold Voltage Shift and Gate Leakage in 650 V P-GaN AlGaN/GaN HEMTs: the Role of Electron-Trapping and Hole-Injection,” Int. Symp. on Power Semicond.Devices & IC's (ISPSD),Chicago, May 13-19, 2018.(Oral presentation)

[5] Yuanyuan Shi, Qi Zhou, W. Xiong, et.al., “Observation of self-recoverable gate degradation in p-GaN/AlGaN/GaN HEMTs after long-term forward gate stress: The trapping & detrapping dynamics of hole/electron,” Int. Symp. on Power Semicond.Devices & IC's (ISPSD), Shanghai, 2019，May 19-23, 2019（poster）

[6] Yuanyuan Shi, Qi Zhou, Yang Jin, et.al., “Impact of interface states on switching behavior of Normally-OFF AlGaN/GaN MIS-HEMTs,” 11th Intl. Conference on Nitride Semiconductors (ICNS), Aug. 2015.(Poster)

[7] Yuanyuan Shi, Zhan Yang, Hongtao Cao, Zhimin Liu, “Controlled c-oriented ZnO nanorod arrays and m-plane ZnO thin film growth on Si substrate by a hydrothermal method,” Journal of Crystal Growth, 312 (2010) 568–572. (SCI, IF:1.742)

[8] Y. Y. Shi, K. Tian, B. X. Lin, and Z. X. Fu, “Luminescene with local distribution and its possible mechanism in zinc oxide micro-crystallites,” Chinese Physics Letter, 24 (2007) 2398. (SCI, IF:0.847)

【Patents】

1. An enhanced GaN HEMT device with high gate reliability , CN214672629-U, 2021

【Awards】