Name：Jiang Dandan

Degrees: Ph.D

Title：Professor

Department：Communication Engineering (Microelectronics)

Research interests：Communication integrated circuits and microelectronic systems, electronic information materials and RF integrated devices.

Research team：Millimeter wave integrated circuit R&D team

E-mail：jdd@cuit.edu.cn

【Biography】

Jiang Dandan is a female professor with a doctoral degree in post-doctorate education, and also serves as a mentor for postgraduate students. She is an expert reviewer in the field of electronics (electrical) for the Chengdu Professional and Technical Qualification Review Committee, and a recipient of the title of "Excellent Young Meteorological Science and Technology Worker" in Sichuan Province.

She has participated in various projects such as the "863" Program, the "973" Program, the National Natural Science Foundation of China, and the National Integrated Circuit Fund. She has personally presided over three national-level projects and four provincial and ministerial-level projects. She has published more than ten papers in domestic and international journals, including important research findings published in renowned journals such as "Electron Device Letters, IEEE" and "Nanotechnology", which have significant original innovative significance. She has obtained dozens of authorized patents. With more than ten years of experience in the integrated circuit industry, she is familiar with the entire integrated circuit industry chain, including processes, devices, circuit design, and product applications.

In recent years, she has been deeply involved in the research and development of radio frequency, microwave, and millimeter-wave integrated circuits, integrating scientific research with education and applying research projects to talent cultivation.

【Courses &Teaching】

Undergraduate course：ntegrated Design Project of Analog Integrated Circuits

【Projects】

(1) National-level Project: Research on XXX Radio Frequency Chip Design, currently under research, principal investigator;
(2) National-level Project: Development of XXX Communication Radio Frequency Front-end Transceiver Chip, completed, project leader;
(3) Provincial and ministerial-level Project: Research on Silicon-based Millimeter-wave Transceiver Integrated Chips for 5G Applications, completed, project leader;
(4) Provincial and ministerial-level Project: Silicon-based Millimeter-wave Transceiver Chips for 5G Communications, completed, project leader;
(5) Provincial and ministerial-level Project: Analysis of Communication Systems and Interoperability Guarantee Suggestions for Different Countries on the Belt and Road, completed, project leader;
(6) Provincial and ministerial-level Project: Research on Emergency Navigator Based on Beidou Satellite Navigation System, currently under research, project leader.

【Publications & Presentations】

(First author or communication author only)

[1] Dandan Jiang et al, “A study of cycling induced degradation mechanisms in Si nanocrystal memory devices”, Nanotechnology, 22, 2011, 254009 (5pp) SCI二区

[2] Dandan Jiang et al, “A Novel Junction Assisted Programming Scheme for Si-Nanocrystal Memory Devices with Improved Performance”, Semiconductor Science Technology, 26, 2011, 115008 (5pp) SCI三区

[3] Dandan Jiang et al, “Cycling Induced Peak-like Interface State Generation in Si-Nanocrystal Memory Devices”, IEEE Electron Device Letters, VOL. 33, NO. 12, DECEMBER 2012 SCI二区

[4] 姜丹丹等, 硅纳米晶存储器的耐受性研究 ，微纳电子技术, 51(8), pp 481-488, 2014

[5] Dandan Jiang, Lei Jin，et al., Investigation of tunneling layer and inter-gate-dielectric engineered TaN floating gate memory, Integrated Ferroelectrics, Vol. 169, 2016, pp.146-152  SCI四区

[6] Dandan Jiang et al, “ A Quantitative Approach to Characterize Total Ionizing Dose Effect of Periphery Device for 65 nm Flash Memory”, Nanoscience and Nanotechnology Letters, Vol. 10, 378–382, 2018 SCI 三区

[7] Yu Zhang , Lei Jin, Dandan Jiang∗ et al, “A Novel Read Scheme for Read Disturbance Suppression in 3D NAND Flash Memory”, IEEE Electron Device Letters, VOL. 38, NO. 12, DECEMBER 2017, 通讯作者 SCI二区

[8] Xingqi Zou, Lei Jin, Dandan Jiang∗ et al, “The Optimization of Gate All Around-L-Shaped Bottom Select Transistor in 3D NAND Flash Memory”, Journal of Nanoscience and Nanotechnology, Vol. 18, 5528–5533, 2018, 通讯作者 SCI四区

[9] Yu Zhang, Lei Jin, Dandan Jiang⁎ et al, “Leakage characterization of top select transistor for program disturbance optimization in 3D NAND flash”, Solid State Electronics, Vol. 141, 18–22, 2018 通讯作者 三区

[10] Xingqi Zou , Lei Jin, Dandan Jiang∗ et al, “ Investigation of Cycling-Induced Dummy Cell Disturbance in 3D NAND Flash Memory”, IEEE Electron Device Letters, VOL. 39, NO. 2, FEBRUARY 2018, 通讯作者 SCI二区

[11] Dandan Jiang et al, “Performance Improvement of Si-NC Memory Device by Using a Novel Junction Assisted Programming Scheme”, ECS Transactions, 34 (1),2011,p149-153 EI

[12] Dandan Jiang et al, “An simple approach to evaluate TID response in high voltage MOSFET for 65nm flash technology”，2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology, pp1470-1472, 2014/10/28 EI

[13] Dandan Jiang, Lei Jin, et al., Performance Enhancement of Metal Floating Gate Memory By Using a Bandgap Engineered High-k Tunneling Barrier, ECS Transactions, 72 (2), 2016, pp.51-55 EI

[14] Dandan Jiang, Zhiliang Xia, Jin Lei, et al., Analysis of the Retention Characteristic in Three dimensional Junction-less Charge Trapping Memory, ECS Transactions, 72 (4), 2016, pp. 233-238 EI

[15] Dandan Jiang, Zhiliang Xia, Jin Lei, et al., Impact of Critical Geometry Dimension on Channel Boosting Potential in 3D NAND Memory, 2016 IEEE 13th International Conference on Solid-State and Integrated Circuit Technology, P1-090, 2016 EI

【Patents】

1. Invention Patent: 201711005929.3, A Microwave Irradiation Anti-satellite Reconnaissance System for the Atmosphere

2. Invention Patent: 201810037507.2, A Microwave Lens Filter and Its Filtering Method

3. Invention Patent: 201810208513.X, A Method for Implementing a Lower Select Transistor in a Three-Dimensional NAND Memory

4. Invention Patent: 201510981932.3, A Current-Mode Controlled DCDC Boost Converter and Its Pulse Frequency Modulation Method

5. Invention Patent: 201910432586.1, A MEMS Array Lens Antenna-Based Device

6. Invention Patent: 2019110338883.5, A Current-Mode Receiver Front-End Circuit with Enhanced Out-of-Band Linearity

7. Invention Patent: 202010271465.6, A Radio Positioning System and Its Positioning Method

8. Invention Patent: 202011226731.X, A Positive Temperature Coefficient Bias Voltage Generation Circuit with Precise Threshold

9. Invention Patent: 2020112162229, A Gain Amplifier for Improving the Range of Positive Temperature Coefficient Variation

10. Invention Patent: 202110513915.2, An RF Power Detection Circuit

11. Invention Patent: 201910902252.6, An Ultra-Low Power Mirror Reflection Optical Communication Device and Method

12. Utility Model Patent: 201721208801.2, An Intelligent Cosmetic Mirror

13. Utility Model Patent: 201721321134.9, A High and Low Frequency Anti-Recording Device for Small Meetings

14. Utility Model Patent: 201821629859.9, A Circuit for Improving the Power Supply Rejection Ratio of Linear Voltage Regulator

15. Utility Model Patent: 201821629786.3, A High-Speed Current Detection Circuit Suitable for Switching Power Supply

16. Utility Model Patent: 201521103012.3, A Current-Mode Controlled DCDC Boost Converter

17. Utility Model Patent: 201921948616.6, A High-Speed Switch Suitable for Millimeter-wave Bands

18. Utility Model Patent: 202020283804.8, An Intelligent Water-saving Temperature Control Faucet Control System

19. Integrated Circuit Layout: BS.195602722, A Single-chip Integrated Power Splitter

20. Invention Patent: 201810549844.X, A Sound Encryption Payment Method, System, User Payment Terminal, and Payment Operation Service Terminal